IndiumV3, Main, Repository, bibRecord, 012820

Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films

Identifieur interne : 012820 ( Main/Repository ); précédent : 012819; suivant : 012821

Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films

Auteurs : RBID : Pascal:00-0515053

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Méthode ablation laser, Laser pulsé, Couche mince, Indium oxyde, Zinc oxyde, Polycristal, Caractérisation, Composition chimique, Relation composition structure, Microstructure, Texture, Relation composition propriété, Conductivité électrique, Spectre UV visible, Spectre IR proche, 8115F, 6855J, 7350D, 7840H, Transmission optique, ZnkIn2OK+3, In O Zn.

English descriptors

KwdEn :
- Characterization, Chemical composition, Crystal growth from vapors, Electrical conductivity, Experimental study, Indium oxides, Laser ablation technique, Microstructure, Near infrared spectrum, Optical transmission, Polycrystals, Property composition relationship, Pulsed lasers, Structure composition relationship, Texture, Thin films, Ultraviolet visible spectrum, Zinc oxides.

Abstract

Indium zinc oxide thin films, with compositions ranging from In₂O₃ to ZnO, were prepared by pulsed laser deposition using a substrate temperature of 500°C and an oxygen pressure of 10^-3 mbar. X-Ray diffraction studies coupled with transmission electron microscopy revealed that the texture and the structure of the films are composition dependent with however a preferred orientation for all compositions, excluding In₂O₃ for consideration. As the Zn/(Zn+In) atomic ratio increased, the film structure evolved from cubic In₂O₃ to hexagonal ZnO via a hexagonal layered Zn_kIn₂O_k+3 structure. An average transmittance of 85-90% in the visible region was obtained for all films independently of the composition. The maximum conductivity (σ = 1500 S cm^-1) was reached for a film having an atomic ratio Zn/(Zn+In)=0.5 (i.e. Zn₂In₂O₅).

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Pascal:00-0515053

Le document en format XML

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O<sub>3</sub>
-ZnO thin films</title>
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<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1>
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<country>France</country>
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<author><name sortKey="Marcel, Corinne" uniqKey="Marcel C">Corinne Marcel</name>
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<author><name sortKey="Dupont, Loic" uniqKey="Dupont L">Loic Dupont</name>
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<author><name sortKey="Rougier, Aline" uniqKey="Rougier A">Aline Rougier</name>
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<author><name sortKey="Leriche, Jean Bernard" uniqKey="Leriche J">Jean-Bernard Leriche</name>
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<author><name sortKey="Guery, Claude" uniqKey="Guery C">Claude Guery</name>
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<publicationStmt><idno type="inist">00-0515053</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 00-0515053 INIST</idno>
<idno type="RBID">Pascal:00-0515053</idno>
<idno type="wicri:Area/Main/Corpus">012172</idno>
<idno type="wicri:Area/Main/Repository">012820</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0959-9428</idno>
<title level="j" type="abbreviated">J. mater. chem.</title>
<title level="j" type="main">Journal of materials chemistry</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Characterization</term>
<term>Chemical composition</term>
<term>Crystal growth from vapors</term>
<term>Electrical conductivity</term>
<term>Experimental study</term>
<term>Indium oxides</term>
<term>Laser ablation technique</term>
<term>Microstructure</term>
<term>Near infrared spectrum</term>
<term>Optical transmission</term>
<term>Polycrystals</term>
<term>Property composition relationship</term>
<term>Pulsed lasers</term>
<term>Structure composition relationship</term>
<term>Texture</term>
<term>Thin films</term>
<term>Ultraviolet visible spectrum</term>
<term>Zinc oxides</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Méthode ablation laser</term>
<term>Laser pulsé</term>
<term>Couche mince</term>
<term>Indium oxyde</term>
<term>Zinc oxyde</term>
<term>Polycristal</term>
<term>Caractérisation</term>
<term>Composition chimique</term>
<term>Relation composition structure</term>
<term>Microstructure</term>
<term>Texture</term>
<term>Relation composition propriété</term>
<term>Conductivité électrique</term>
<term>Spectre UV visible</term>
<term>Spectre IR proche</term>
<term>8115F</term>
<term>6855J</term>
<term>7350D</term>
<term>7840H</term>
<term>Transmission optique</term>
<term>ZnkIn2OK+3</term>
<term>In O Zn</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Indium zinc oxide thin films, with compositions ranging from In<sub>2</sub>
O<sub>3</sub>
 to ZnO, were prepared by pulsed laser deposition using a substrate temperature of 500°C and an oxygen pressure of 10<sup>-3</sup>
 mbar. X-Ray diffraction studies coupled with transmission electron microscopy revealed that the texture and the structure of the films are composition dependent with however a preferred orientation for all compositions, excluding In<sub>2</sub>
O<sub>3</sub>
 for consideration. As the Zn/(Zn+In) atomic ratio increased, the film structure evolved from cubic In<sub>2</sub>
O<sub>3</sub>
 to hexagonal ZnO via a hexagonal layered Zn<sub>k</sub>
In<sub>2</sub>
O<sub>k+3</sub>
 structure. An average transmittance of 85-90% in the visible region was obtained for all films independently of the composition. The maximum conductivity (σ = 1500 S cm<sup>-1</sup>
) was reached for a film having an atomic ratio Zn/(Zn+In)=0.5 (i.e. Zn<sub>2</sub>
In<sub>2</sub>
O<sub>5</sub>
).</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0959-9428</s0>
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<fA03 i2="1"><s0>J. mater. chem.</s0>
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<fA06><s2>10</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Structural and physical characterisation of transparent conducting pulsed laser deposited In<sub>2</sub>
O<sub>3</sub>
-ZnO thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>NAGHAVI (Negar)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MARCEL (Corinne)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DUPONT (Loic)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ROUGIER (Aline)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LERICHE (Jean-Bernard)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>GUERY (Claude)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1>
<s2>80039 Amiens</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA47 i1="01" i2="1"><s0>00-0515053</s0>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Indium zinc oxide thin films, with compositions ranging from In<sub>2</sub>
O<sub>3</sub>
 to ZnO, were prepared by pulsed laser deposition using a substrate temperature of 500°C and an oxygen pressure of 10<sup>-3</sup>
 mbar. X-Ray diffraction studies coupled with transmission electron microscopy revealed that the texture and the structure of the films are composition dependent with however a preferred orientation for all compositions, excluding In<sub>2</sub>
O<sub>3</sub>
 for consideration. As the Zn/(Zn+In) atomic ratio increased, the film structure evolved from cubic In<sub>2</sub>
O<sub>3</sub>
 to hexagonal ZnO via a hexagonal layered Zn<sub>k</sub>
In<sub>2</sub>
O<sub>k+3</sub>
 structure. An average transmittance of 85-90% in the visible region was obtained for all films independently of the composition. The maximum conductivity (σ = 1500 S cm<sup>-1</sup>
) was reached for a film having an atomic ratio Zn/(Zn+In)=0.5 (i.e. Zn<sub>2</sub>
In<sub>2</sub>
O<sub>5</sub>
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<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Laser ablation technique</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Thin films</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>06</s5>
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<s2>NK</s2>
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<s2>NK</s2>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
</fC03>
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<s5>12</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Structure composition relationship</s0>
<s5>12</s5>
</fC03>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Texture</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Relation composition propriété</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Property composition relationship</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Relación composición propiedad</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Spectre UV visible</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Ultraviolet visible spectrum</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Espectro UV visible</s0>
<s5>17</s5>
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<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Near infrared spectrum</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Espectro IR próximo</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8115F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7350D</s0>
<s2>PAC</s2>
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<s5>58</s5>
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<s2>PAC</s2>
<s4>INC</s4>
<s5>59</s5>
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<s5>81</s5>
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<s5>81</s5>
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<s5>81</s5>
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<fC03 i1="23" i2="3" l="FRE"><s0>ZnkIn2OK+3</s0>
<s4>INC</s4>
<s5>92</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>In O Zn</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
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<s5>82</s5>
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<s5>82</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>83</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>83</s5>
</fC07>
<fN21><s1>339</s1>
</fN21>
</pA>
</standard>
</inist>
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Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films

Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films

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